Quantum transport devices based on resonant tunneling. Thompson, 2004 device research conference at notre dame, in june 2004. Resonant tunnelling and negative differential conductance in. Resonant tunneling diode rtd rtd, resonant tunneling diode. Berger, senior member, ieee, ronghua yu, phillip e. The simulated circuit details, the related waveforms and threestate logic operations are described. Resonant tunneling diodes rtd are quantum devices that have been investigated in recent years, and there is a great attention focused on transmission phenomenon. Can be seen as leaking of the amplitude through the potential step. Future semiconductor devices for multivalued logic. Negativeresistance resonant tunnel diodes rtds perform a complete set of logic functions with a single basic configuration. Originating from the technological progress of semiconductor technology, circuit architectures with reduced complexity are investigated by exploiting the negativedifferential resistance of resonant tunneling devices. Logic circuits using resonanttunneling hot electron. On the basis of the determined band structure, we discussed the operating mechanism of the vdw tunneling device from the perspective of the tunneling and diffusion phenomena. The device consists of a small mesa resonant tunneling diode rtd in the gaasalas material.
Ac behavior of resonanttunneling diodes in the scatteringdominated regime by john paul mattia submitted to the department of electrical engineering and computer science on september 6, 1996, in partial fulfillment of the requirements for the degree of doctor of philosophy abstract the behavior of a resonant tunneling diode rtd whose. Latter, iogansen, 1964 discussed the possibility of resonant transmission of an electron through double barriers formed in semiconductor crystals. The device consists of a small mesa resonant tunneling diode rtd in the gaas alas material system surrounded by a schottky gate. Calculations are done by utilizing a new subcircuit model for simulating the rthemt in the spice simulator. The present invention includes a resonant tunneling device rtd structure which feeds multiple mutually isolated. Resonant tunneling diode pdf resonant tunneling diode is an important advancement to this problem. This device and the demonstrator circuits are fabricated by the locom partner gmud. The resonant tunnel devices for logic applications include resonant tunnel transistors rtt and hybrid devices incorporating resonant tunneling diodes and one or more fets rtdfet. The resonant tunneling diode rtd has been widely studied because of its importance in the. Resonant tunneling diode with high peak current density. Quantum devices solidstate device theory electronics. Resonant tunnelling diodes rtds are very fast non linear circuit elements which.
The unique characteristics of resonanttunneling rt devices, such as the negative differential resistance ndr, can be used to construct compact functional circuits. The bistable nature of the basic logic gates implemented using resonant tunneling devices has. Quantum dot gate field effect transistor qdgfet works based on the change in threshold voltage due to stored charge in the quantum dots in the gate region. A plurality of signal inputs are coupled to the first terminal of the resonant tunneling transistor 12 through a summer 10.
The currentvoltage characteristic often exhibits negative differential resistance regions. A working mechanism of a resonant tunneling diode device and negative differential resistance in output characteristic. Fabrication of 200ghz f max resonant tunneling diodes. Resonant tunneling diodes are developed for circuit applications such as power memory cells 1, high speed adders 2, high speed logic, analogtodigital conversion. We have fabricated resonant interband tunneling field effect transistors on both inasgasbalsb and ingaasinalas. As a result, quantum device technology is a promising emerging alternative for highperformance very. As a result, quantum device technology is a promising emerging alternative for highperformance. Resonant tunneling devices gated rtds have schottkey or. A vertical resonant tunneling transistor for application in digital logic circuits article pdf available in ieee transactions on electron devices 486. A vertical resonant tunneling transistor for application. Resonant tunneling diode structures for functionally. Then, by integrating the vdw tunneling device and a pchannel vdw transistor in series, we demonstrated a ternary latch circuit capable of storing three logic states. This report is a summary of the activities in the field of resonant tunneling device circuit design. By taking advantage of the multistate behavior of resonant tunneling devices rtd the logic depth and the circuit complexity per logic function is reduced at the gate level.
Resonant tunnelling optoelectronic circuits 177 presence of a small inductance in circuit containing an rtd, together with rtd intrinsic capacitance make possible the oscillations at very high frequencies, experimental demonstrated up to 831 ghz suzuki et al. Zno composite nanolayer with mobility edge quantization. Recent works also explore spinpolarized resonant tunneling, which can be useful for application in spintronic devices. Rtds have been shown to achieve a maximum frequency of up to 2. Phosphorenerhenium disulfide heterojunctionbased negative differential resistance device for multivalued logic. Overview resonant tunneling diodes rtds comprise semiconductor structures having two large bandgap barrier layers with a single low bandgap quantum well between them. A quantum confined transport based on a zinc oxide composite nanolayer that has conducting states with mobility edge quantization is proposed and was applied to. A particularly useful form of a tunneling diode is the resonant tunneling diode rtd.
Switching characteristics of nonvolatile memory using gan. Increasing to a proper maximum value, only the device with the lowest peak current switches quenches from the. The parallel correlator is an essential component in cdma transceivers used. Swers workpackage the principal task of unido is to investigate novel logic circuit architectures for resonant tunneling devices, to perform circuit simulations. Citeseerx resonant tunneling device logic circuits. We have fabricated resonant interband tunneling field effect transistors on both inasgasbalsb and. This behavior allowed an extremely large ratio about 100,000. Us5563530a multifunction resonant tunneling logic gate. Quantum transport devices based on resonant tunneling reza m. Johnny ling, university of rochester, rochester, ny 14627. Resonant tunneling diode circuits using pspice sciencedirect.
Details of the design, input, and output values and margins, delay of each transition, maximum operating. Bistable transition logic element circuits using three resonant tunneling diodes and their application to a static binary. A unified model for sibased resonant interband tunneling diodes grown on soi, niu jin, sungyong chung, dongmin liu, wu lu, ronghua yu, paul r. The negative differential resistance characteristic of these devices, achieved due to resonant tunneling, is also ideally suited for the design of highly compact, selflatching logic circuits. Quantum dot channel field effect transistor qdcfet produces more number of states in their transfer characteristics because of charge flow through the miniband. Resonant tunneling diode structures for functionally complete low power logic. Resonant tunneling can be described by the transmission and reflection processes of coherent electron waves through the double barrier structure. For the first time, this oxide film exhibited a phenomenon, called resonant tunneling, in which electrons move between quantum wells at a specific voltage. As a result, quantum device technology is a promising emerging alternative for highperformance verylargescaleintegration design. In addition tunneling device architectures based on. Tunnel ling diode rtd logic circuits are threshold gates tgs instead. Pdf by using resonanttunneling diodes rtds and high electron mobility transistors hemts, we implement a new class of logic circuits. Ac behavior of resonanttunneling diodes in the scattering.
A resonanttunneling diode rtd is a diode with a resonanttunneling structure in which electrons can tunnel through some resonant states at certain energy levels. Tunneling diodes tds have been widely studied for their importance in achieving very high speed in wideband devices and circuits that are beyond conventional transistor technology. Resonant tunneling devices, semiconductor device modeling. Sivcoresonant tunneling device with multiple negative differential resistance. Multithreshold threshold logic circuit design using resonant tunneling devices.
A multiple negative differential resistance heterojunction. Digital circuit applications of resonant tunneling devices. Theoretical study of electronic transmission in resonant. Occurs when an electron passes through a potential barrier without having enough energy to do so. But in contrast to dynamic circuits where the logic state is represented by the electrical charge on. Resonanttunneling diode wikipedia, the free encyclopedia page 2. A vertical resonant tunneling transistor for application in digital logic. Sibased resonant interband tunneling diodes and quantum. Resonanttunneling diode wikipedia, the free encyclopedia. Furthermore, a biasing input is operable to apply a bias to the first terminal of resonant. Section v deals with circuit applications, and we conclude with section vi. The resonant tunneling diode rtd has been widely studied because of its. Logic synthesis and circuit modeling of a programmable. Abstract a vertical resonant tunneling transistor vrtt has been developed, its properties and its application in digital logic circuits based on the monostablebistable transition logic element mobile principle are described.
Pdf programmable logic gate based on resonant tunneling. Device physics and characteristics for function in a logic application, resonanttunneling transistors must possess current gain, inputoutput isolation, threshold voltage uniformity, and faninout, as required for conventional digital circuits 24. A new structure for an exclusiveor xor gate based on the resonanttunneling high electron mobility transistor rthemt is introduced which comprises only an rthemt and two fets. A 32bit ultrafast parallel correlator using resonant. Resonanttunneling transistors a negative transconductance that is used in logic xor gate with only one transistor. Pdf resonanttunneling diode and hemt logic circuits with. Us5698997a resonant tunneling diode structures for. A multifunction resonant tunneling logic gate is provided in which a resonant tunneling transistor 12 includes a first terminal, a second terminal, and a third terminal. This is a quantum device not to be confused with the esaki tunnel diode, ch 3, a conventional heavily doped bipolar semiconductor. Resonant tunneling devices and circuits resonant tunneling devices and circuits shen, jun 19960419 00. Operation speed of rtds zone of the most attractive features of rtds is their potential for extremely high speed operation zrtds with 712 ghz oscillation and 1. A new xor structure based on resonanttunneling high. Rtd designs can offer a reduction in circuit component count by up to 40% when compared with the equivalent cmos logic family.
Cmos devices, a new quantum mos qmos familyof logic circuits, having. Cascaded gates are driven synchronously by multiple clock phases or by asynchronous event signals. Other applications for tunneling devices include analogtodigital convertors 1416, optical receivers 17, samplers 18, and triggering circuits 19, all with microwave to millimeter wave bandwidths. Summary a resonanttunnelingdiode rtd based sense amplifier circuit. In this paper a resonant tunneling device threshold logic family. This paper introduces future devices for multivalued logic implementation. Tunneling diode and hemt logic circuits with multiple thresholds and multilevel output, ieee j. The basic device configuration is a monolithically integrated resonant tunneling diode heterostructure fieldeffect transistor rtdhfet. To make a three terminal tunneling device rtds are merged with conventional transistors and resonant tunneling bipolar transistors, resonant tunneling hot electron transistors and gated rtds are fabricated. Fabrication of 200ghz f max resonant tunneling diodes for integrated circuit and microwave applications s. Inputs feed through schottky diodes to a transfer rtd coupled to a clocked latch having two rtds in series. It is shown that an ingaasbased rhet with a thin collector barrier structure improves current gain and peaktovalley current ratio. Using compoundsemiconductor resonanttunneling diodes takao waho department of electrical and electronics engineering. Pdf digital circuit applications of resonant tunneling.
Using multithreshold threshold gates in rtdbased logic design. Chen, member, ieee, and guofu niu, senior member, ieee abstract the circuit concept of programmable logic. Index termsresonant tunneling diodes, high electron mobility. The use of quantum effects to reduce the logic depth of a circuit and a flexible and. Pseudo dynamic gate design based on the resonant tunneling. This will minimize the power and area of the integrated circuit ic. Electrons tunnel through two barriers separated by a well in flowing source to drain in a resonant tunneling diode. The resonant tunneling diode rtd, have features of its low voltage. A 32bit ultrafast parallel correlator using resonant tunneling devices shriram kulkarni, pinaki mazumder, and george i. Multithresholdthresholdlogiccircuitdesignusing resonant. Pdf design and analysis of resonanttunnelingdiode rtd.
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